aug. 1999 pin configuration mitsubishi semiconductor m54567p/fp 4-unit 1.5a darlington transistor array with clamp diode description m54567p and M54567FP are four-circuit darlington transis- tor arrays with clamping diodes. the circuits are made of pnp and npn transistors. both the semiconductor inte- grated circuits perform high-current driving with extremely low input-current supply. features high breakdown voltage (bv ceo 3 50v) high-current driving (ic(max) = 1.5a) with clamping diodes driving available with nmos ic output wide operating temperature range (ta = C20 to +75 c) application drives of relays and printers, digit drives of indication ele- ments (leds and lamps), and power amplification function the m54567p and M54567FP each have four circuits, which are made of pnp transistors and npn darlington transistors. the input has 8k w , and a spike-killer clamping diode is pro- vided between the output pin (collector) and com pin. all output transistor emitters are connected to the gnd pin. collector current is 1.5a maximum. the maximum collector- emitter voltage is 50v. the M54567FP is enclosed in a molded small flat package, enabling space-saving design. circuit diagram v v a v v w c c 10 C0.5 ~ +50 1.5 C0.5 ~ +30 50 1.5 1.0 1.92(p)/1.00(fp) C20 ~ +75 C55 ~ +125 i f a ratings unit symbol parameter conditions supply voltage collector-emitter voltage collector current input voltage clamping diode reverse voltage power dissipation operating temperature storage temperature output, h current per circuit output, l pulse width 10ms, duty cycle 5% pulse width 100ms, duty cycle 5% ta = 25 c, when mounted on board v cc v ceo i c v i v r p d t opr t stg clamping diode forward current absolute maximum ratings (unless otherwise noted, ta = C20 ~ +75 c) 22k 2k 5.5k 3k 8k gnd com v cc input output the diode, indicated with the dotted line, is parasitic, and cannot be used. unit : w the four circuits share the com and gnd. 1 o1 ? in1 ? in2 ? o2 ? v cc com common v cc com common gnd gnd 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 ? o3 ? in3 ? in4 ? o4 y t ? output4 input4 input3 output3 output1 input1 input2 output2 16p4(p) package type 16p2n-a(fp)
aug. 1999 mitsubishi semiconductor m54567p/fp 4-unit 1.5a darlington transistor array with clamp diode recommended operating conditions (unless otherwise noted, ta = C20 ~ +75 c) v ma 6 50 v cc v cc C3.5 5 4 0 v cc C0.5 0 v ma m a v i ceo = 100 m a v cc = 6v, v i = 0.5v v cc = 4v, v i = 0.5v, i c = 1.25a v cc = 4v, v i = 0.5v, i c = 0.7a v i = v cc C3.5v v i = v cc C6v v r = 50v i f = 1.25a, v cc open v cc = 4v, v ce = 4v, i c = 1a, ta = 25 c v (br) ceo i cc i r v f h fe symbol unit parameter test conditions limits min typ + max v v v v i c 0 0 1.25 0.7 a v ce (sat) i i 50 4000 3.0 1.6 1.1 C0.3 C0.58 1.6 30000 4.5 2.2 1.7 C0.6 C0.95 100 2.3 ns ns t on t off 190 5300 switching characteristics (unless otherwise noted, ta = 25 c) symbol unit parameter test conditions limits min typ max timing diagram note 1 test circuit pg 50 w c l open v cc v o r l input output (1) pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, z o = 50 w v i = 0.5 to 4v (2) input-output conditions : r l = 8.3 w , v o = 10v, v cc = 4v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes measured device v cc v o v ih v il parameter limits symbol unit supply voltage output voltage min typ max h input voltage l input voltage v cc = 5v, duty cycle p : no more than 18% fp : no more than 9% v cc = 5v, duty cycle p : no more than 4% fp : no more than 2% collector current (current per 1 cir- cuit when 4 circuits are coming on si- multaneously) electrical characteristics (unless otherwise noted, ta = C20 ~ +75 c) collector-emitter breakdown voltage supply current (one circuit coming on) clamping diode reverse current clamping diode forward voltage dc amplification factor collector-emitter saturation voltage input current + : the typical values are those measured under ambient temperature (ta) of 25 c. there is no guarantee that these values are obtained under any conditions. c l = 15pf (note 1) ton 50% 50% 50% 50% toff input output turn-on time turn-off time
aug. 1999 mitsubishi semiconductor m54567p/fp 4-unit 1.5a darlington transistor array with clamp diode typical characteristics duty-cycle-collector characteristics (m54567p) duty cycle (%) a ? collector current ic (a) 0 1.0 0.5 1.5 2.0 0 20 40 60 80 100 duty cycle (%) ? a collector current ic (a) duty-cycle-collector characteristics (m54567p) 0 1.0 0.5 1.5 2.0 0 20 40 60 80 100 duty cycle (%) a ? collector current ic (a) duty-cycle-collector characteristics (M54567FP) 0 1.0 0.5 1.5 2.0 0 1.0 0.5 1.5 2.0 0 20 40 60 80 100 duty-cycle-collector characteristics (M54567FP) duty cycle (%) a ? collector current ic (a) 0 20406080100 thermal derating factor characteristics ambient temperature ta (?) M54567FP m54567p power dissipation pd (w) 0 0 0.5 1.0 1.5 2.0 25 50 75 100 output saturation voltage collector current characteristics output saturation voltage v ce (sat) (v) 0 0.8 0.4 1.2 1.6 0 0.5 1.0 1.5 2.0 collector current ic (a) v cc = 4v v i = 0.5v ta = 75? ta = 25? ta = ?0? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 75? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 75? ?he collector current values represent the current per circuit. ?epeated frequency 3 10hz ?he value in the circle represents the value of the simultaneously-operated circuit. ? cc = 5v ?a = 25? ? cc = 5v ?a = 25?
aug. 1999 mitsubishi semiconductor m54567p/fp 4-unit 1.5a darlington transistor array with clamp diode input characteristics supply voltage-input voltage v cc v i (v) 0 ?.4 ?.2 ?.6 ?.8 ?.0 0 12345 input current i i (ma) v cc = 5v ta = 75? ta = 25? ta = ?0? supply current characteristics supply voltage v cc (v) 0 4.0 2.0 6.0 8.0 10.0 0 246810 supply current icc (ma) v i = 0.5v ta = 75? ta = 25? ta = ?0? clamping diode characteristics forward bias voltage v f (v) 0 1.0 0.5 1.5 2.0 0 0.5 1.0 1.5 2.0 forward bias current i f (a) ta = 75? ta = 25? ta = ?0? grounded emitter transfer characteristics supply voltage-input voltage v cc v i (v) 0 0.8 0.4 1.2 1.6 0 0.5 1.0 1.5 2.0 collector current ic (a) v cc = 4v v ce = 4v ta = 75? ta = 25? ta = ?0? dc amplification factor collector current characteristics collector current ic (ma) 10 1 10 4 v cc = 4v v ce = 4v ta = 25? ta = 75? ta = ?0? 5 3 2 7 5 3 2 7 10 5 5 3 2 7 10 4 10 3 10 2 23 57 23 57 10 3 23 57 10 2 dc amplification factor h fe
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